Centre for Solar Energy Research

MOCVD of Cd(1-x)Zn(x)S/CdTe PV cells using an ultra-thin absorber layer

Andrew J. Clayton et al. — Wed, 25 Jul 2012 08:44:11 PDT

Ultra-thin Cd(₁ ₋ ₓ)Zn(ₓ)S/CdTe devices were produced by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD) with varying CdTe absorber thicknesses ranging from 1.0 to 0.2 mm and compared to baseline cells with total CdTe thickness of 2.25μ. The ultra-thin CdTe layers (≤1 μm) were intentionally doped with As to induce p-type conductivity in the absorber. Cell performance reduced with CdTe thickness, with the magnitude of photo-current generation loss becoming more significant for the very thin CdTe layers. The decline in cell performance was lower than the optically limited performance relating to a decrease in shunt resistance, Rsh, especially for the thinnest cells due to areas of incomplete CdTe coverage and large presence of pin-holes leading to micro-shorts. Incorporation of Zn into the CdS window layer improved cell performance for all devices except when 0.2 μm thick CdTe was used. This improvement was markedly in the blue region owing to enhanced optical transparency of the window layer. External quantum efficiency (EQE) measurements showed a red-shift of the window layer absorption edge due to leaching out of Zn during the CdCl₂ treatment. Reduction of the CdCl₂ deposition time was demonstrated to recover the blue response of the ultra-thin cells.

Interpretation of Absolute Laser Reflectance During Optical Monitoring of Polycrystalline GaAs Deposition on Quartz Using Metalorganic Chemical Vapor Deposition

Andrew J. Clayton et al. — Thu, 29 Sep 2011 04:18:47 PDT

Gallium arsenide was deposited by metal organic chemical vapor deposition in a horizontal quartz reactor tube using trimethylgallium and arsine at 400^oC - 500^oC. Nucleation time and deposition rate were monitored using in situ laser reflectometry. This allowed differentiation between film and parasitic growth, which was not possible with other optical techniques. An absolute reflectance model was developed using measurements prior to GaAs deposition, and then employed to calculate values for GaAs on quartz. Detected reflectance intensities during experimental GaAs deposition were low compared to the model due to 3-dimensional island growth, causing scattering of the incident laser radiation.

MOCVD of ultra-thin PV solar cell devices using a pyrite based p-i-n structure

Andrew J. Clayton et al. — Thu, 17 Feb 2011 08:33:02 PST

Ultra-thin photovoltaic (PV) devices were produced by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD) incorporating a highly absorbing intermediate sulphurised FeSₓ layer into a CdS/CdTe structure. X ray diffraction (XRD) confirmed a transitional phase change to pyrite FeS₂ after post growth sulphur (S) annealing of the FeSₓ layer between 400⁰C and 500⁰C. Devices using a superstrate configuration incorporating a sulphurised or non sulphurised FeSₓ layer were compared to p-n devices with only a CdS/CdTe structure. Devices with sulphurised FeSₓ layers performed least efficiently, even though pyrite fractions were present. Rutherford back scattering (RBS) confirmed deterioration of the CdS/FeSₓ interface due to S inter-diffusion during the annealing process.