Abstract
Ultra-thin photovoltaic (PV) devices were produced by atmospheric pressure metal organic chemical vapour deposition (AP-MOCVD) incorporating a highly absorbing intermediate sulphurised FeSₓ layer into a CdS/CdTe structure. X ray diffraction (XRD) confirmed a transitional phase change to pyrite FeS₂ after post growth sulphur (S) annealing of the FeSₓ layer between 400⁰C and 500⁰C. Devices using a superstrate configuration incorporating a sulphurised or non sulphurised FeSₓ layer were compared to p-n devices with only a CdS/CdTe structure. Devices with sulphurised FeSₓ layers performed least efficiently, even though pyrite fractions were present. Rutherford back scattering (RBS) confirmed deterioration of the CdS/FeSₓ interface due to S inter-diffusion during the annealing process.
Disciplines
Semiconductor and Optical Materials
Recommended Citation
Clayton, A. J., , Irvine, S.J.C., Barrioz, V., Brooks, W.S.M., Zoppi, G., Forbes, I., Rogers, K.D., Lane, D.W., Hutchings, K., and Roncallo, S. (2011) “MOCVD of ultra-thin PV solar cell devices using a pyrite based p-i-n structure”. Thin Solid Films
Digital Commons Citation
Clayton, A. J., , Irvine, S.J.C., Barrioz, V., Brooks, W.S.M., Zoppi, G., Forbes, I., Rogers, K.D., Lane, D.W., Hutchings, K., and Roncallo, S. (2011) “MOCVD of ultra-thin PV solar cell devices using a pyrite based p-i-n structure”. Thin Solid Films
Comments
Copyright © 2011 Elsevier. This is the author’s final version of the work after peer review. The article was originally published in Thin Solid Films in 2011 by Elsevier. The full published article can be found at http://www.sciencedirect.com